Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentration range from below 1 x 10 16 cm(-3) to 2 x 10 18 cm(-3) in samples with a high C content, strongly correlated with the Si doping level in the samples ranging from 1 x 10 17 cm(-3) to 7 x 10 18 cm(-3). On the other hand, we find predominantly neutral cation vacancies with concentrations above 5 x 10 18 cm(-3) in samples with a low C content. The cation vacancies are important as compensating centers only in material with a high C content at high Si doping levels.Peer reviewe

A 6-12 GHz Analogue Lag-Correlator for Radio Interferometry

Aims: We describe a 6-12 GHz analogue correlator that has been developed for use in radio interferometers. Methods: We use a lag-correlator technique to synthesis eight complex spectral channels. Two schemes were considered for sampling the cross-correlation function, using either real or complex correlations, and we developed prototypes for both of them. We opted for the ``add and square'' detection scheme using Schottky diodes over the more commonly used active multipliers because the stability of the device is less critical. Results: We encountered an unexpected problem, in that there were errors in the lag spacings of up to ten percent of the unit spacing. To overcome this, we developed a calibration method using astronomical sources which corrects the effects of the non-uniform sampling as well as gain error and dispersion in the correlator.Comment: 14 pages, 21 figures, accepted for publication in A&

A 6-12 GHz Analogue Lag-Correlator for Radio Interferometry

Aims: We describe a 6-12 GHz analogue correlator that has been developed for use in radio interferometers. Methods: We use a lag-correlator technique to synthesis eight complex spectral channels. Two schemes were considered for sampling the cross-correlation function, using either real or complex correlations, and we developed prototypes for both of them. We opted for the ``add and square'' detection scheme using Schottky diodes over the more commonly used active multipliers because the stability of the device is less critical. Results: We encountered an unexpected problem, in that there were errors in the lag spacings of up to ten percent of the unit spacing. To overcome this, we developed a calibration method using astronomical sources which corrects the effects of the non-uniform sampling as well as gain error and dispersion in the correlator.Comment: 14 pages, 21 figures, accepted for publication in A&

Electrochemical etching of AlGaN for the realization of thin-film devices

Heterogeneously integrated AlGaN epitaxial layers will be essential for future optical and electrical devices like thin-film flip-chip ultraviolet (UV) light-emitting diodes, UV vertical-cavity surface-emitting lasers, and high-electron mobility transistors on efficient heat sinks. Such AlGaN-membranes will also enable flexible and micromechanical devices. However, to develop a method to separate the AlGaN-device membranes from the substrate has proven to be challenging, in particular, for high-quality device materials, which require the use of a lattice-matched AlGaN sacrificial layer. We demonstrate an electrochemical etching method by which it is possible to achieve complete lateral etching of an AlGaN sacrificial layer with up to 50% Al-content. The influence of etching voltage and the Al-content of the sacrificial layer on the etching process is investigated. The etched N-polar surface shows the same macroscopic topography as that of the as-grown epitaxial structure, and the root-mean square roughness is 3.5 nm for 1 \ub5m x 1 \ub5m scan areas. Separated device layers have a well-defined thickness and smooth etched surfaces. Transferred multi-quantum-well structures were fabricated and investigated by time-resolved photoluminescence measurements. The quantum wells showed no sign of degradation caused by the thin-film process

The harmonic power spectrum of the soft X-ray background I. The data analysis

Fluctuations of the soft X-ray background are investigated using harmonic analysis. A section of the ROSAT All-Sky Survey around the north galactic pole is used. The flux distribution is expanded into a set of harmonic functions and the power spectrum is determined. Several subsamples of the RASS have been used and the spectra for different regions and energies are presented. The effects of the data binning in pixels are assessed and taken into account. The spectra of the analyzed samples reflect both small scale effects generated by strong discrete sources and the large scale gradients of the XRB distribution. Our results show that the power spectrum technique can be effectively used to investigate anisotropy of the XRB at various scales. This statistics will become a useful tool in the investigation of various XRB components.Comment: 12 pages, A&A accepte

Distant galaxy clusters in the COSMOS field found by HIROCS

We present the first high-redshift galaxy cluster candidate sample from the HIROCS survey found in the COSMOS field. It results from a combination of public COSMOS with proprietary H-band data on a 0.66 square degree part of the COSMOS field and comprises 12 candidates in the redshift range 1.23 < z < 1.55. We find an increasing fraction of blue cluster members with increasing redshift. Many of the blue and even some of the reddest member galaxies exhibit disturbed morphologies as well as signs of interaction.Comment: 5 pages, 5 figures, in print format, accepted for publication by A&A Letter

Properties of the 5- state at 839 keV in 176Lu and the s-process branching at A = 176

The s-process branching at mass number A = 176 depends on the coupling between the high-K ground state and a low-lying low-K isomer in 176Lu. This coupling is based on electromagnetic transitions via intermediate states at higher energies. The properties of the lowest experimentally confirmed intermediate state at 839 keV are reviewed, and the transition rate between low-K and high-K states under stellar conditions is calculated on the basis of new experimental data for the 839 keV state. Properties of further candidates for intermediate states are briefly analyzed. It is found that the coupling between the high-K ground state and the low-K isomer in 176Lu is at least one order of magnitude stronger than previously assumed leading to crucial consequences for the interpretation of the 176Lu/176Hf pair as an s-process thermometer.Comment: 11 pages, 4 figures accepted for publication in Phys. Rev.

Microwave background anisotropies and non-linear structures II. Numerical computations

A new method for modelling spherically symmetric inhomogeneities is applied to the formation of clusters in an expanding Universe. We impose simple initial velocity and density perturbations of finite extent and we investigate the subsequent evolution of the density field. Photon paths are also calculated, allowing a detailed consideration of gravitational lensing effects and microwave background anisotropies induced by the cluster. We apply the method to modelling high-redshift clusters and, in particular, we consider the reported microwave decrement observed towards the quasar pair PC1643+4631 A&B. We also consider the effect on the primordial microwave background power spectrum due to gravitational lensing by a population of massive high-redshift clusters.Comment: 15 pages, 23 figures; Monthly Notices of the Royal Astronomical Society (MNRAS), in pres